A study on the field emission characteristics of a wide band-gap thin film

In order to discover the effect of the SiC layer on the electron emission, the emitter with SiC layer is simplified as a Rectangular Double-Barrier (RDB) in one dimension. The Time-Independent SchrOdinger Equation is solved for the energy band structure by the Numerov algorithm under the boundary continuous condition, then a tunneling matrix is gained through Simpson quadrature. The result of the numerical simulations indicates a resonant property of the emission current, and there presents a high electron emission efficiency at the resonant state. Furthermore the resonance depends merely on the potential profile and its deformation by the applied field. Consequencially this advantage may be taken in the emitter fabrication.