Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

被引：147

作者：

Ahn, Seung-Eon ^{[2
,3
]}

Song, Ihun ^{[1
]}

Jeon, Sanghun ^{[1
]}

Jeon, Youg Woo ^{[1
]}

Kim, Young ^{[1
]}

Kim, Changjung ^{[1
]}

Ryu, Byungki ^{[1
]}

Lee, Je-Hun ^{[4
]}

Nathan, Arokia ^{[5
]}

Lee, Sungsik ^{[6
]}

Kim, Gyu Tae ^{[2
]}

Chung, U-In ^{[1
]}

机构：

[1] Samsung Elect Corp, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Samsung Elect Corp, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

[4] Samsung Elect Corp, Liquid Crystal Display R&D Ctr, Yongin 446712, Gyeonggi Do, South Korea

[5] Univ Cambridge, Ctr Adv Photon & Elect, Dept Engn, Cambridge CB3 0FA, England

[6] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 19期

关键词：

amorphous oxide semiconductors; In-Ga-Zn-O; In-Zn-O; thin film transistors; phototransistors; remote in-cell touch; TRANSISTOR;

D O I：

10.1002/adma.201200293

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2631 / 2636

页数：6

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