Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

被引：140

作者：

Ahn, Seung-Eon ^{[2
,3
]}

Song, Ihun ^{[1
]}

Jeon, Sanghun ^{[1
]}

Jeon, Youg Woo ^{[1
]}

Kim, Young ^{[1
]}

Kim, Changjung ^{[1
]}

Ryu, Byungki ^{[1
]}

Lee, Je-Hun ^{[4
]}

Nathan, Arokia ^{[5
]}

Lee, Sungsik ^{[6
]}

Kim, Gyu Tae ^{[2
]}

Chung, U-In ^{[1
]}

机构：

[1] Samsung Elect Corp, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Samsung Elect Corp, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

[4] Samsung Elect Corp, Liquid Crystal Display R&D Ctr, Yongin 446712, Gyeonggi Do, South Korea

[5] Univ Cambridge, Ctr Adv Photon & Elect, Dept Engn, Cambridge CB3 0FA, England

[6] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 19期

关键词：

amorphous oxide semiconductors; In-Ga-Zn-O; In-Zn-O; thin film transistors; phototransistors; remote in-cell touch; TRANSISTOR;

D O I：

10.1002/adma.201200293

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2631 / 2636

页数：6

共 28 条

[1] AN ECONOMICAL TOUCH PANEL USING SAW ABSORPTION
ADLER, R
DESMARES, PJ
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1987, 34 (02) : 195 - 201
[2] [Anonymous], SID INT S
[3] Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors
Chen, Wei-Tsung
Hsueh, Hsiu-Wen
Zan, Hsiao-Wen
Tsai, Chuang-Chuang
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (07) : H297 - H299
[4] Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
Clark, S. J.
Robertson, J.
Lany, S.
Zunger, A.
[J]. PHYSICAL REVIEW B, 2010, 81 (11)
[5] Cok R. S., 2004, US Patent, Patent No. [2004/0212599 A1, 20040212599]
[6] Doering R. W., 1989, US Patent, Patent No. 4868912
[7] Emerging Transparent Electrodes Based on Thin Films of Carbon Nanotubes, Graphene, and Metallic Nanostructures
Hecht, David S.
Hu, Liangbing
Irvin, Glen
[J]. ADVANCED MATERIALS, 2011, 23 (13) : 1482 - 1513
[8] A self-assembled nano optical switch and transistor based on a rigid conjugated polymer, thioacetyl-end-functionalized poly(para-phenylene ethynylene)
Hu, WP
Nakashima, H
Furukawa, K
Kashimura, Y
Ajito, K
Liu, YQ
Zhu, DB
Torimitsu, K
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (09) : 2804 - 2805
[9] Native point defects in ZnO
Janotti, Anderson
Van de Walle, Chris G.
[J]. PHYSICAL REVIEW B, 2007, 76 (16)
[10] Jeon S, 2012, NAT MATER, V11, P301, DOI [10.1038/NMAT3256, 10.1038/nmat3256]

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