Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)3

被引：14

作者：

Lee, JH ^{[1
]}

Kim, JY ^{[1
]}

Rhee, SW ^{[1
]}

Rhee, W ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Lab Adv Mat Proc, Dept Chem Engn, Pohang 790784, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 12期

关键词：

D O I：

10.1149/1.1390927

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The chemical and deposition properties of RuO2 thin films with the liquid precursor Ru(OD)(3) (OD = 2,4-octanedionate) have been investigated. By thermal analysis, Ru(OD)(3) was thermally stable in Ar atmosphere and rapidly reacted with oxygen at about 270 degrees C. The RuO2 thin films deposited at 250-550 degrees C had a dense and octahedral-like morphology and the minimum resistivity was 48 mu Omega cm at a deposition temperature of 350 degrees C. (C) 1999 The Electrochemical Society. S1099-0062(99)06-130-1. All rights reserved.

引用

页码：622 / 623

页数：2

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