Striped anode engineering: a concept for fast switching power devices

被引：17

作者：

Luther-King, N ^{[1
]}

Sweet, M ^{[1
]}

Spulber, O ^{[1
]}

Vershinin, K ^{[1
]}

De Souza, MM ^{[1
]}

Narayanan, EMS ^{[1
]}

机构：

[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(01)00287-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the striped anode concept is evaluated, for the first time in a MOS controlled power device, as a method of controlling the anode injection efficiency and enhancing of the turn-off performance. Simulation results using a 2d-mixed mode device-circuit system indicate that rather than having a blanket implanted anode, a striped anode structure can result in a significantly improved trade-off between turn-off energy losses and the on-state voltage drop. It is shown that when applied to the 6.5 kV IGBT, the improvement can be more than a factor of two when switching 30 A cm(-2), in comparison to conventional uniform lifetime control. A striped anode structure consists of high injection regions (p(+) stripes), sandwiched between thin lightly doped p(-) regions of low injection efficiency. The p+ stripes provide an optimum level of conductivity modulation required for a given on-state voltage drop in the N-drift region of a planar IGBT, while the low efficiency regions accelerate device turn-off. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：903 / 909

页数：7

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