Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution

被引：6
|
作者：
Shamirzaev, TS [1 ]
Zhuravlev, KS [1 ]
Yakusheva, NA [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 09期
关键词：
semiconductors; optical properties;
D O I：
10.1016/S0038-1098(99)00388-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the excitonic photoluminescence of heavily doped GaAs:Mn layers grown by liquid phase epitaxy from the bismuth solution. The free-exciton line dominates in the photoluminescence spectra of the layers with manganese atoms concentration more than 10(19) cm(-3), while impurity bound exciton lines have more than 10 times weaker intensities. It is shown that the low intensity of the bound exciton lines is the result of the ionization of exciton-impurity complexes by the ionized impurity-induced built-in electric field. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：503 / 506
页数：4
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