Study of Residual Charging in Dielectric Less Capacitive MEMS Switches

被引：24
作者：
Mardivirin, D. [1 ]
Bouyge, D. [1 ]
Crunteanu, A. [1 ]
Pothier, A. [1 ]
Blondy, P. [1 ]
机构：
[1] Univ Limoges, CNRS, XLIM, F-87060 Limoges, France
来源：
2008 IEEE MTT-S International Microwave Symposium Digest, Vols 1-4 | 2008年
关键词：
RF-MEMS; capacitive switches; reliability;
D O I：
10.1109/MWSYM.2008.4633096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dielectric charging is one of the most challenging issues in RF-MEMS capacitive switches. Dielectric less capacitive switch is shown with a measured on to off ratio of 9. The reliability of the switch has been studied and residual pun in voltage shift has been observed. For the first time, charging results are presented on this type of switch and validated up to one month. It is shown that charging can be modeled using a simple Curie-Von Schweidler equation. This model has been validated, with good agreement between the coefficients determined after holding down the switch for about 10000 s, and further experimental results up to one month in the down state.
引用
收藏
页码：33 / 36
页数：4
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