The electrical transport properties of ReS2 and ReSe2 layered crystals

被引：48

作者：

Tiong, KK ^{[1
]}

Ho, CH

Huang, YS

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 111卷 / 11期

关键词：

semiconductors; electron-phonon interactions; electronic transport;

D O I：

10.1016/S0038-1098(99)00240-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependent electrical transport properties of n-type ReS2 and ReSe2 were investigated over an extended range from 30 to 630 K. The activation energies for the impurity carriers in the temperature range of 250-350 K for n-type ReS2 and ReSe2 were determined to be 178 and 103 meV, respectively. From the high temperature conductivity measurement, the thermal band gaps for the intrinsic carriers were evaluated to be 1.19 eV for ReS2 and 0.98 eV for ReSe2. We have also reported for the first time the electrical anisotropy of the ReS2 and ReSe2 single crystals in the van der Waals plane by measuring the resistivity along the different crystal orientations. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：635 / 640

页数：6

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