Variation of the feedback sensitivity in a 1.55 μm InAs/InP quantum-dash Fabry-Perot semiconductor laser

被引：23

作者：

Grillot, F. ^{[1
]}

Naderi, N. A. ^{[1
]}

Pochet, M. ^{[1
]}

Lin, C-Y. ^{[1
]}

Lester, L. F. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

III-V semiconductors; indium compounds; laser feedback; quantum dot lasers;

D O I：

10.1063/1.2998397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dynamic feedback properties of a 1.55 mu m InAs/InP quantum dash laser are reported. The ground state linewidth enhancement factor (alpha(H)-factor) is found to be enhanced from similar to 1 to similar to 14 as the bias current is increased beyond the threshold value. As a consequence of the variation in the alpha(H)-factor, the feedback sensitivity of the quantum dash semiconductor laser is dramatically affected over the entire range of operational currents. The onset of its critical feedback regime, which is incompatible with data transmission, is shown to exhibit a variation of approximately 20 dB for the quantum dash device.

引用

页数：3

共 24 条

[1] Lang and Kobayashi phase equation [J].

Alsing, PM ;

Kovanis, V ;

Gavrielides, A ;

Erneux, T .

PHYSICAL REVIEW A, 1996, 53 (06) :4429-4434

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57 μm [J].

Azouigui, S. ;

Kelleher, B. ;

Hegarty, S. P. ;

Huyet, G. ;

Dagens, B. ;

Lelarge, F. ;

Accard, A. ;

Make, D. ;

Le Gouezigou, O. ;

Merghem, K. ;

Martinez, A. ;

Zou, Q. ;

Ramdane, A. .

OPTICS EXPRESS, 2007, 15 (21) :14155-14162

[4] Tolerance to optical feedback of 10-Gb/s quantum-dash-based lasers emitting at 1.51 μm [J].

Azouigui, S. ;

Dagens, B. ;

Lelarge, F. ;

Provost, J. G. ;

Accard, A. ;

Grillot, F. ;

Martinez, A. ;

Zou, Q. ;

Ramdane, A. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (13-16) :1181-1183

[5] Systematic investigation of InAs/InP quantum-dash based lasers under external optical feedback [J].

Azouigui, S. ;

Dagens, B. ;

Lelarge, F. ;

Accard, A. ;

Make, D. ;

Le Gouezigou, O. ;

Merghem, K. ;

Martinez, A. ;

Zou, Q. ;

Ramdane, A. .

APPLIED PHYSICS LETTERS, 2008, 92 (20)

[6] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[7] Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser [J].

Dagens, B ;

Markus, A ;

Chen, JX ;

Provost, JG ;

Make, D ;

Le Gouezigou, O ;

Landreau, J ;

Fiore, A ;

Thedrez, B .

ELECTRONICS LETTERS, 2005, 41 (06) :323-324

[8] Modulation characteristics of quantum-dot lasers: The influence of P-type doping and the electronic density of states on obtaining high speed [J].

Deppe, DG ;

Huang, H ;

Shchekin, OB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (12) :1587-1593

[9] Mechanism for period-doubling bifurcation in a semiconductor laser subject to optical injection [J].

Erneux, T ;

Kovanis, V ;

Gavrielides, A ;

Alsing, PM .

PHYSICAL REVIEW A, 1996, 53 (06) :4372-4380

[10] 2.5-Gb/s transmission characteristics of 1.3-μm DFB lasers with external optical feedback [J].

Grillot, F ;

Thedrez, B ;

Py, J ;

Gauthier-Lafaye, O ;

Voiriot, V ;

Lafragette, JL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (01) :101-103

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