Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing

The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in tenns of surface morphology, surface roughness, material removal mechanism and residual stress (by Raman spectroscopy). The surface morphology exhibited evidence of both material removal mechanisms: the brittle mode and the ductile mode. The surface roughness increased with a high v(f), which promoted the formation of craters on the sawn surface. On applying a higher v(c), the surface roughness reduced, since this favored the formation of damage-free grooves. The Raman spectrum showed evidence of different residual crystalline phases on the sawn surface, which confirms the material removal mechanisms. An increase in v(f), for the same v(c), caused at reduction in the compressive stress, since the brittle mode predominated as the material removal mechanism. Maintaining v(f) constant and increasing v(c) results in higher compressive stress, caused by plastic deformation of the silicon during chip formation.