Growth and optical properties of gallium nitride film on glass substrates

被引：6

作者：

An, Pingbo ^{[1
]}

Zhao, Lixia ^{[1
]}

Zhang, Shuo ^{[1
]}

Liu, Lei ^{[1
]}

Duan, Ruifei ^{[1
]}

Wei, Xuecheng ^{[1
]}

Lu, Hongxi ^{[1
]}

Wang, Junxi ^{[1
]}

Li, Jinmin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Res & Dev Ctr, Tsinghua East Rd A35, Beijing 100083, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 | 2016年 / 13卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

gallium nitride; quartz glass; MOCVD; temperature-dependent photoluminescence; LOW-TEMPERATURE GROWTH; ECR-PEMOCVD; GAN FILMS; DEPENDENCE;

D O I：

10.1002/pssc.201510207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, gallium nitride (GaN) films were grown on the quartz glass substrates using metal organic chemical vapor deposition with AlN buffer layer. The AlN layer was deposited using rf-magnetron sputtering. Although the direct nucleation of GaN on quartz glass substrate is difficult, with AlN as the nucleation layer, a large-area polycrystalline GaN film can be obtained. The structural and optical properties were investigated. The results show that the GaN film has a preferential orientation along (0002). There are mainly three emission regions in the photoluminescence spectra, including the band-edge, green (2.45-2.55eV) and yellow (2.0-2.35 eV) emission regions. The origin and temperature dependence of the peak position, full-width of half-magnitude and intensity were also discussed. The findings may help to understand the growth and improve the properties of GaN film grown on amorphous glass substrates. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：200 / 204

页数：5

共 15 条

[1] Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE [J].