Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeOx/W Memristor

被引：13

作者：

Maikap, S. ^{[1
]}

Rahaman, S. Z. ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Thin Film Nano Tech Lab, Tao Yuan 333, Taiwan

来源：

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2 | 2012年 / 45卷 / 06期

关键词：

CU METALLIC FILAMENT; SOLID-ELECTROLYTE;

D O I：

10.1149/1.3700961

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Low power operations of resistive switching memory using Al/Cu/GeOx/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeOx solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >10(4) with multi-level (MLC) operation and low SET and RESET powers (similar to 19 and similar to 8.36 mu W) are advantages for future high density memory applications.

引用

页码：257 / 261

页数：5