Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeOx/W Memristor

被引：13
作者：
Maikap, S. [1 ]
Rahaman, S. Z. [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Thin Film Nano Tech Lab, Tao Yuan 333, Taiwan
来源：
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2 | 2012年 / 45卷 / 06期
关键词：
CU METALLIC FILAMENT; SOLID-ELECTROLYTE;
D O I：
10.1149/1.3700961
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Low power operations of resistive switching memory using Al/Cu/GeOx/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeOx solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >10(4) with multi-level (MLC) operation and low SET and RESET powers (similar to 19 and similar to 8.36 mu W) are advantages for future high density memory applications.
引用
收藏
页码：257 / 261
页数：5
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