Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeOx/W Memristor

Low power operations of resistive switching memory using Al/Cu/GeOx/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeOx solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >10(4) with multi-level (MLC) operation and low SET and RESET powers (similar to 19 and similar to 8.36 mu W) are advantages for future high density memory applications.