A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition using 130nm SiGe BiCMOS Process

被引：0

作者：

He, Zhongxia Simon ^{[1
]}

Bao, Mingquan ^{[2
]}

Li, Yinggang ^{[2
]}

Hassona, Ahmed ^{[1
]}

Campion, James ^{[3
]}

Oberhammer, Joachim ^{[3
]}

Zirath, Herbert ^{[1
,2
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, S-41296 Gothenburg, Sweden

[2] Ericsson Res, Stockholm, Sweden

[3] KTH Royal Inst Technol, Dept Micro & Nanosyst, Stockholm, Sweden

来源：

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年

基金：

欧盟地平线“2020”;

关键词：

D-band; transmitter chipset; mixer; SiGe BiCMOS; chip-to-waveguide transition;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

引用

页码：28 / 30

页数：3

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