Novel Noise Parameter Determination for On-Wafer Microwave Noise Measurements

被引:19
作者
Chen, Chih-Hung [1 ]
Wang, Ying-Lien [1 ]
Bakr, Mohamed H. [1 ]
Zeng, Zheng [2 ]
机构
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
[2] United Microelect Corp, Sunnyvale, CA 94085 USA
基金
加拿大创新基金会;
关键词
High-frequency noise; noise calibration; noise measurement; noise parameters;
D O I
10.1109/TIM.2008.925021
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel method to determine the noise parameters of receivers or devices under test (DUTs) for on-wafer microwave noise measurements is presented. An iterative technique is utilized, and fast convergence is achieved by the proposed impedance selection principle. This proposed method reduces the parameter variations in the conventional methods. The impact of the impedance difference on noise parameter determination is experimentally evaluated using a DUT fabricated in a standard 90-nm CMOS technology.
引用
收藏
页码:2462 / 2471
页数:10
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