Evaluation of band alignment of α-Ga2o3/α-(AlxGa1-x)2O3 heterostructures by X-ray photoelectron spectroscopy

被引：55
作者：
Uchida, Takayuki [1 ]
Jinno, Riena [1 ]
Takemoto, Shu [1 ]
Kaneko, Kentaro [1 ,2 ]
Fujita, Shizuo [1 ,2 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158520, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 04期
关键词：
THIN-FILMS; PHOTOEMISSION-SPECTROSCOPY; BUFFER LAYERS; BETA-GA2O3; OFFSETS; GROWTH;
D O I：
10.7567/JJAP.57.040314
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band alignment at an alpha-Ga2O3/alpha-(AlxGa1-x)(2)O-3 heterointerface, with different Al compositions (x), grown on a c-plane sapphire substrate was evaluated by X-ray photoelectron spectroscopy. The experimental results show that the heterointerface has the type-I band discontinuity with the valence band offsets of 0.090, 0.12, and 0.14 eV, and the conduction band offsets of 0.34, 0.79, and 1.87 eV, for x values of 0.1, 0.4, and 0.8, respectively. The small band offset for the valence band is attributed to the fact that the valence band of oxides is constituted by the localized O 2p level, which is dominated by the nature of oxygen atoms. The type-I band discontinuity is desirable for a variety of heterostructure devices. (C) 2018 The Japan Society of Applied Physics
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页数：3
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