Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

被引：1

作者：

Sugawara, Y. ^{[1
]}

Yao, Y. ^{[1
]}

Ishikawa, Y. ^{[1
]}

Danno, K. ^{[2
]}

Suzuki, H. ^{[2
]}

Bessho, T. ^{[2
]}

Kawai, Y. ^{[2
]}

Ikuhara, Y. ^{[1
,2
,3
]}

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan

[2] Toyota Motor Co Ltd, Shizuoka 4101193, Japan

[3] Univ Tokyo, Tokyo 1138656, Japan

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

Hexagonal SiC; Dislocation structure; Transmission electron microscopy; BEAM;

D O I：

10.4028/www.scientific.net/MSF.725.11

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed the transmission electron microscopy (TEM) sample preparation technique for the low dislocation density of 4H-SiC by combining the KOH+Na2O2 (KN) etching and the focused ion beam (FIB) microsampling technique. The dislocation under sea-shell pit was then characterized by large-angle convergent-beam electron diffraction (LACBED). It is demonstrated that this method is powerful for evaluating Burgers vectors of dislocations. Burgers vector of the measured basal plane dislocation (BPD) is determined to be b=1/3[(1) over bar2 (1) over bar0]. Two-beam bright-field (TBBF) imaging identified the rotating direction of the threading screw dislocation (TSD) is counter-clockwise.

引用

页码：11 / +

页数：2

共 7 条

[1]

[Anonymous], 1999, P P 25 INT S TEST FA

[2] LACBED characterization of dislocation loops [J].

Morniroli, J. P. ;

Marceau, R. K. W. ;

Ringerz, S. P. ;

Boulanger, L. .

PHILOSOPHICAL MAGAZINE, 2006, 86 (29-31) :4883-4900

[3] Specimen preparation for high-resolution transmission electron microscopy using focused ion beam and Ar ion milling [J].

Sasaki, H ;

Matsuda, T ;

Kato, T ;

Muroga, T ;

Iijima, Y ;

Saitoh, T ;

Iwase, F ;

Yamada, Y ;

Izumi, T ;

Shiohara, Y ;

Hirayama, T .

JOURNAL OF ELECTRON MICROSCOPY, 2004, 53 (05) :497-500

[4]

TANAKA M, 1991, J ELECTRON MICROSC, V40, P211

[5]

Williams D.B., 1996, TRANSMISSION ELECT M, P415

[6]

Yao Y., DRIP 14 UNPUB

[7] Dislocation analysis in highly doped n-type 4H-SiC by using electron beam induced current and KOH+Na2O2 etching [J].

Yao, Yong-Zhao ;

Sugawara, Yoshihiro ;

Ishikawa, Yukari ;

Saitoh, Hiroaki ;

Danno, Katsunori ;

Suzuki, Hiroshi ;

Kawai, Yoichiro ;

Shibata, Noriyoshi .

SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 :294-+

← 1 →