Atomistic investigation of scratching-induced deformation twinning in nanocrystalline Cu

被引:23
作者
Zhang, Junjie [2 ,3 ]
Sun, Tao [2 ]
Yan, Yongda [2 ]
Shen, Dong [2 ]
Li, Xiaodong [1 ]
机构
[1] Univ S Carolina, Dept Mech Engn, Columbia, SC 29208 USA
[2] Harbin Inst Technol, Ctr Precis Engn, Harbin 150001, Peoples R China
[3] Ruhr Univ Bochum, Interdisciplinary Ctr Adv Mat Simulat ICAMS, D-44789 Bochum, Germany
基金
中国博士后科学基金;
关键词
MOLECULAR-DYNAMICS; DISLOCATION NUCLEATION; ELASTIC-DEFORMATION; FORMATION MECHANISM; MAXIMUM STRENGTH; ROOM-TEMPERATURE; TWINS; COPPER; PLASTICITY; SIMULATION;
D O I
10.1063/1.4757937
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deformation twinning is an important deformation mode of nanocrystalline metals. In current study, we investigate the scratching-induced deformation twinning in nanocrystalline Cu by means of molecular dynamics simulations. The tribological behavior, the deformation mechanisms, the formation mechanism of deformation twins, and the grain size dependence of the propensity of deformation twinning are elucidated. Simulation results demonstrate that deformation twinning plays an important role in the plastic deformation of nanocrystalline Cu under nanoscratching, in addition to dislocation activity and grain boundary-associated mechanism. The nucleation of initial twinning partial dislocations originates from the dissociation of lattice partial dislocations that emit from grain boundary triple junctions, and subsequent twin boundary migration is resulted from the glide of lattice partial dislocations emitted from twin boundary-grain boundary intersections on the twin plane. It is found that the propensity of deformation twinning in nanocrystalline Cu under scratching has strong dependence on both grain size and stress state. These findings will advance our understanding of the tribological behavior of nanocrystalline Cu and provide design and fabrication guidelines for nanocrystalline Cu based micro/nanosystems. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757937]
引用
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页数:7
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