Growth of single-phase CuInAlSe2 thin films by using pulsed laser deposition and selenization

被引：5
|
作者：
Kim, Kyoo Ho [1 ]
Fianti [1 ]
机构：
[1] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 712749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 12期
关键词：
CuInAlSe2; Pulsed laser deposition; Selenization; Stacking order; CU(IN; AL)SE-2; SOLAR-CELLS; OPTICAL-PROPERTIES; EFFICIENCY; GA)SE-2; COPPER;
D O I：
10.3938/jkps.60.2001
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
CuInAlSe2 (CIAS) thin films were deposited layer by layer, with a certain stacking order on a substrate by using pulsed laser deposition (PLD) and selenization. The precursor was selenied by holding the temperatures for 10 minutes each at 160 A degrees C, 260 A degrees C, 300 A degrees C, and 500 A degrees C. The crystalline phase, the composition, the morphology, and the optical and electrical properties of the CIAS thin films were characterized. The thin films were single-phase chalcopyrite quaternaries with band gaps above 1.9 eV.
引用
收藏
页码：2001 / 2006
页数：6
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