Control of electro-chemical etching for uniform 0.1 mu m gate formation of HEMT

被引：13

作者：

Nitta, Y

Ohshima, T

Shigemasa, R

Nishi, S

Kimura, T

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the gate recess etching of 0.1 mu m gate HEMT process, the anomalous phenomenon caused by electrochemical etching was found. The isolation region implanted with oxygen ion was etched more deeply than the channel region, which caused a non-flat etched surface. This anomaly effects seriously on the device performance and its uniformity. We suppressed the anomaly by optimizing the condition of the isolation and the pattern of the device. Flat etched surface was achieved and uniform device characteristics was obtained.

引用

页码：47 / 50

页数：4