Non-steady-state photoelectromotive force in an AlN crystal

被引：8

作者：

Bryushinin, M. ^{[1
]}

Kulikov, V. ^{[1
]}

Mokhov, E. ^{[1
]}

Nagalyuk, S. ^{[1
]}

Sokolov, I. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 08期

关键词：

ALUMINUM NITRIDE; CONDUCTIVITY;

D O I：

10.1103/PhysRevB.86.085209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the experimental investigation of the non-steady-state photoelectromotive force in aluminum nitride crystal. The sample is illuminated by an oscillating interference pattern formed by two coherent light beams and the alternating current is detected as a response of the material. The experiments are performed for two geometries, where arising photocurrent is parallel or perpendicular to the optical axis of the crystal. Dependencies of the signal amplitude versus light intensity, and temporal and spatial frequencies are measured. The photoelectric parameters of the material are estimated for the light wavelength lambda = 532 nm.

引用

页数：5

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