RF aerosol plasma fabrication of indium tin oxide and tin oxide thin films

被引:24
作者
Lee, DH
Vuong, KD
Williams, JAA
Fagan, J
Condrate, RA
Wang, XW
机构
[1] Alfred University, Alfred
关键词
D O I
10.1557/JMR.1996.0111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent, conductive indium-tin oxide (ITO) and tin oxide thin films were deposited on soda-lime-silicate (SLS) float glass and silica glass substrates by an RF aerosol plasma technique in an atmospheric environment. The ITO films were deposited from solutions with various In:Sn ratios. The dependence of the film properties on the substrate temperature, deposition time, and tin concentration has been studied. The films were characterized by several techniques including XRD, EDS, electrical resistivity, SEM, optical (IR-UV-Vis transmission), Mossbauer, and infrared spectroscopy. The results showed that film phase, morphology, thickness, crystallite size, and conductivity depend on the solution composition and deposition parameters. XRD revealed that In2O3 was present in the film when a In:Sn ratio of 5:5 or higher was used; otherwise only SnO2 shown. SEM analysis showed that dense and uniform films were formed with particle sizes ranging from approximately 50 nm to 150 nm. The resistivity of the ITO films ranged from 0.12 to 5.0 ohm-cm at room temperature. Optical transmission of the ITO-coated glasses was not different from the uncoated samples. Infrared results indicated that the structure of the near surface of the glasses was significantly modified with a higher indium concentration. The advantages of the atmospheric, RF aerosol plasma deposition process over other techniques are discussed.
引用
收藏
页码:895 / 903
页数:9
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