Nucleation and Growth Dynamics of MBE-Grown Topological Insulator Bi2Te3 Films on Si (111)

被引：1

作者：

Borisova, Svetlana ^{[1
]}

Krumrain, Julian ^{[1
]}

Mussler, Gregor ^{[1
]}

Luysberg, Martina ^{[2
]}

Gruetzmacher, Detlev ^{[1
]}

机构：

[1] Forschungszentrum Julich, Peter Granberg Inst 9, D-52425 Julich, Germany

[2] Peter Granberg Inst 5, Emst Ruska Ctr Microscopy & Spect Elect, D-52425 Julich, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Topological insulators; thin films; molecular beam epitaxy; scanning tunneling microscopy;

D O I：

10.1063/1.4848350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Topological insulator Bi2Te3 films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.

引用

页码：191 / +

页数：2

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