Three-dimensional x-ray metrology for block copolymer lithography line-space patterns

被引：41

作者：

Sunday, Daniel F. ^{[1
]}

Hammond, Matthew R. ^{[1
]}

Wang, Chengqing ^{[1
]}

Wu, Wen-li ^{[1
]}

Kline, R. Joseph ^{[1
]}

Stein, Gila E. ^{[2
]}

机构：

[1] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA

[2] Univ Houston, Dept Chem & Biomol Engn, Houston, TX 77004 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2013年 / 12卷 / 03期

关键词：

lithography; metrology; semiconductors; THIN-FILMS; CROSS-SECTION; SCATTERING; ANGLE; TRANSITION; ORIENTATION; REAL;

D O I：

10.1117/1.JMM.12.3.031103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the development of a new measurement method, resonant critical-dimension small-angle x-ray scattering (res-CDSAXS), for the characterization of the buried structure of block copolymers (BCP) used in directed self assembly (DSA). We use resonant scattering at the carbon edge to enhance the contrast between the two polymer blocks and allow the determination of the three-dimensional shape of the native lamella in a line-space pattern by CDSAXS. We demonstrate the method by comparing the results from conventional CDSAXS to res-CDSAXS on a 1:1 DSA BCP sample with a nominal 50-nm pitch. The res-CDSAXS method provides substantially improved uncertainty in the fit of the line shape and allows the determination of the buried structure. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：7

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