Electrochemically grown vertically aligned ZnO nanorod array/p+-Si (100) heterojunction contact diodes

被引：7

作者：

Rodriguez-Moreno, Jorge ^{[1
]}

Navarrete-Astorga, Elena ^{[1
]}

Romero, Rocio ^{[2
]}

Martin, Francisco ^{[1
]}

Schrebler, Ricardo ^{[3
]}

Ramos-Barrado, Jose R. ^{[1
]}

Dalchiele, Enrique A. ^{[4
]}

机构：

[1] Univ Malaga, Dept Fis Aplicada & Ing Quim, Unidad Asociada CSIC, Lab Mat & Superficies, E-29071 Malaga, Spain

[2] Univ Malaga, Unidad Nanotecnol Edif Bioinnovac & Nanotecnol, Malaga 29590, Spain

[3] Pontificia Univ Catolica Valparaiso, Fac Ciencias, Inst Quim, Valparaiso, Chile

[4] Fac Ingn, Inst Fis, Montevideo 11000, Uruguay

来源：

THIN SOLID FILMS | 2013年 / 548卷

关键词：

ZnO nanorod arrays; p-Type silicon; Heterojunction diode; Electrodeposition; SI HETEROJUNCTION; ELECTRICAL-PROPERTIES; ELECTRODEPOSITION; ELECTROLUMINESCENCE; NANOWIRE; FILM;

D O I：

10.1016/j.tsf.2013.09.091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO nanorod array/p(+)-Si vertical heterojunction diodes, in which the ZnOnanorods have been grown by electrodeposition onto a SnO2:F thin film/glass substrate, have been fabricated by the direct-bonding technique. The heterojunction diode device showed a very good rectifying behavior with a rectification ratio of the forward-to-reverse bias current as ca. 2.5 x 10(4) at a voltage of +/- 10 V. The current-voltage (I-V) characteristic was examined in the framework of the thermionic emission model. The obtained ideality factor and the barrier height values of the diode are 2.8 and 0.85 eV, respectively. The conduction mechanisms have been investigated from I-V characteristics as well. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：235 / 240

页数：6

共 46 条

[1] Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode [J].