Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements

被引：21

作者：

Jeong, Jaewook ^{[1
]}

Lee, Gwang Jun ^{[1
]}

Kim, Joonwoo ^{[1
]}

Jeong, Soon Moon ^{[1
]}

Kim, Jung-Hye ^{[1
]}

机构：

[1] Daegu Gyeongbuk Inst Sci & Technol, Nano & Bio Res Div, Taegu, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 09期

关键词：

CONTACT RESISTANCE; MOBILITY; VOLTAGE; TFT;

D O I：

10.1063/1.4819886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyzed the temperature-dependent electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method (GFP) with temperatures ranging from 93 to 373 K. The intrinsic field-effect mobility and source/drain parasitic resistance were separately extracted using the GFP method. We found that temperature-dependent transfer characteristics originated from the temperature-dependent intrinsic field-effect mobility of the a-IGZO TFTs. The parasitic resistance was also correlated with the intrinsic-field effect mobility, which decreases as the intrinsic field-effect mobility increases, indicating that access parasitic resistance originated from bulk regions rather than metal/semiconductor junction barrier is a key factor to determine the parasitic resistance of a-IGZO TFTs. (C) 2013 AIP Publishing LLC.

引用

页数：4

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