Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

被引：95

作者：

Ma, Xiao-Hua ^{[1
]}

Zhu, Jie-Jie ^{[1
]}

Liao, Xue-Yang ^{[2
]}

Yue, Tong ^{[2
]}

Chen, Wei-Wei ^{[1
]}

Hao, Yue ^{[2
]}

机构：

[1] Xidian Univ, Sch Tech Phys, Xian 710071, Peoples R China

[2] Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Microelect, Xian 710071, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

ALGAN/GAN HEMTS; CENTERS;

D O I：

10.1063/1.4813912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the interface traps of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were characterized quantitatively by dynamic capacitance dispersion technique. An analysis of Al2O3/AlGaN interface states demonstrated deep traps in the range of 0.53 eV-1.16 eV below the conduction band, with trap density nearly constant and two orders of magnitude smaller than that at AlGaN surface due to the use of atomic layer deposition-grown Al2O3 insulator. As much as 2.23 x 10(13) eV(-1) cm(-2) fast traps with time constant smaller than 0.3 mu s were observed at AlGaN/GaN interface of MOS-HEMTs, which was consistent with the qualitative prediction from pulsed I-V test. (C) 2013 AIP Publishing LLC.

引用

页数：3

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