Nanographene device fabrication using atomic force microscope

被引:5
作者
Ahmad, Muneer [1 ]
Seo, Yongho [1 ,2 ]
Choi, Young Jin [3 ,4 ]
机构
[1] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[2] Sejong Univ, Fac Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea
[3] MyongJi Univ, Dept Phys, Yongin 449728, South Korea
[4] MyongJi Univ, Dept Nano Sci & Engn, Yongin 449728, South Korea
关键词
anodisation; atomic force microscopy; chemical vapour deposition; nanofabrication; nanolithography; Raman spectra; graphene; C; lithography; controlled humidity condition; tip speed; tip voltage; two terminal bar like device; graphene film; film thickness; film uniformity; Raman spectroscopy; local anodic oxidation; contact mode atomic force microscopy; nanographene device fabrication; SCANNING PROBE LITHOGRAPHY; HIGH-MOBILITY; GRAPHENE;
D O I
10.1049/mnl.2013.0199
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A report is presented on the local anodic oxidation of graphene film prepared by chemical vapour deposition using contact mode atomic force microscopy. Raman spectroscopy was used to check the uniformity and thickness of large area graphene film. Various kinds of patterns such as lines, ribbons and further, more complex structures, such as hexagons, two-terminal bar-like devices, were written by varying the tip voltage from -6 to -12 V and the tip speed from 60 to 200 nm/s. It was found that one can easily write any kind of patterns by just manipulating the tip voltage and tip speed instead of concentrating on other factors such as controlled humidity conditions, applied force on the tip and tip current. Also, it is confirmed that with an increase in tip voltage and by slowing the tip movement during lithography, one can write very narrow and sharp patterns which are important factors for the fabrication of graphene-based electronic devices.
引用
收藏
页码:422 / 425
页数:4
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