A Meta-Structure-Based Frequency Doubler With Low Input Power

被引：2

作者：

Dong, Yazhou ^{[1
]}

Liang, Huajie ^{[1
]}

Liang, Shixiong ^{[2
]}

Kou, Wei ^{[1
]}

Hao, Xiaolin ^{[2
]}

Zhou, Hongji ^{[1
]}

Zeng, Hongxin ^{[1
]}

Feng, Zhihong ^{[2
]}

Yang, Ziqiang ^{[1
]}

Zhang, Yaxin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050000, Hebei, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Resonant frequency; Power generation; Electric fields; Schottky diodes; Impedance matching; Couplings; Electromagnetic scattering; Meta structure; SSR; frequency doubler;

D O I：

10.1109/LED.2022.3207053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the operating frequency increases, the output power of traditional frequency doublers becomes too low to drive the next stage devices. To address this problem, a double-layer meta-chip circuit consisting of a symmetrical split ring (SSR) structure with a doubler circuit is presented. It combines the transmission mode in the rectangular waveguide with the resonance mode in the meta structure. The meta structure improves the coupling efficiency between the diode and electromagnetic energy, strengthens the electric field at the diode, and ultimately enhances the efficiency of the frequency doubler at low input power. From 160-180 GHz, the experiments show that the frequency doubler with SSR achieved a peak efficiency of 22.4% with an output power of 10.6 mW. Its performance of maximum output power is 45.2% better than the traditional structure, which provides an important technical approach to achieve higher efficiency at low input power.

引用

页码：1830 / 1833

页数：4

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