Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample

被引：19

作者：

da Silva, MJ

Quivy, AA

González-Borrero, PP

Marega, E

机构：

[1] Univ Sao Paulo, Inst Fis, Lab Novos Mat Semicondutores, BR-05315970 Sao Paulo, Brazil

[2] Univ Sao Paulo, Inst Fis & Quim, BR-13560970 Sao Carlos, SP, Brazil

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 236卷 / 1-3期

基金：

巴西圣保罗研究基金会;

关键词：

atomic force microscopy; nanostructures; molecular beam epitaxy; semiconducting III-V compounds; semiconducting indium compounds;

D O I：

10.1016/S0022-0248(01)02109-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the maximum density of InAs quantum dots grown by molecular beam epitaxy on GaAs(0 0 1) substrates. Different from most current work, we took advantage of the non-uniformity of the molecular beams to produce a sample in which the amount of InAs material was continuously varied across the surface in order to analyze the evolution of the QDs as a function of the film thickness. A density of structures as high as 1800 mum(-2) could be observed by atomic force microscopy and is around twice the maximum value typically reported in the literature. No loss of size uniformity was detected for such a high density. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：41 / 45

页数：5

相关论文

共 14 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser [J].

Asryan, LV ;

Suris, RA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (04) :554-567

[4] Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers [J].

Kirstaedter, N ;

Schmidt, OG ;

Ledentsov, NN ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Maximov, MV ;

Kopev, PS ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 1996, 69 (09) :1226-1228

[5] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) [J].

Kobayashi, NP ;

Ramachandran, TR ;

Chen, P ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3299-3301

[6] Nucleation transitions for InGaAs Islands on vicinal (100) GaAs [J].

Leon, R ;

Senden, TJ ;

Kim, Y ;

Jagadish, C ;

Clark, A .

PHYSICAL REVIEW LETTERS, 1997, 78 (26) :4942-4945

[7] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100) [J].

MADHUKAR, A ;

XIE, Q ;

CHEN, P ;

KONKAR, A .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2727-2729

[10] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719