Characterization of metal oxide semiconductor field effect transistor dosimeters for application in clinical mammography

被引:9
作者
Benevides, LA
Hintenlang, DE [1 ]
机构
[1] Univ Florida, Nucl Sci Ctr 202, Gainesville, FL 32653 USA
[2] USN, Dosimetry Ctr, Bethesda, MD 20889 USA
关键词
D O I
10.1118/1.2150779
中图分类号
R8 [特种医学]; R445 [影像诊断学];
学科分类号
1002 ; 100207 ; 1009 ;
摘要
Five high-sensitivity metal oxide semiconductor field effect transistor dosimeters in the TN-502 and 1002 series (Thomson Nielsen Electronics Ltd., 25B, Northside Road, Ottawa, ON K2H8S1, Canada) were evaluated for use in the mammography x-ray energy range (22-50 kVp) as a tool to assist in the documentation of patient specific average glandular dose. The dosimeters were interfaced with the Patient Dose Verification System, model No. TN-RD 15, which consisted of a dosimeter reader and up to four dual bias power supplies. Two different dual bias power supplies were evaluated in this study, model No. TN-RD 22 in high-sensitivity mode and a very-high sensitivity prototype. Each bias supply accommodates up to five dosimeters for 20 dosimeters per system. Sensitivity of detectors, defined as the mV/C kg(-1), was measured free in air with the bubble side of the dosimeter facing the x-ray field with a constant exposure. All dosimeter models' angular response showed a marked decrease in response when oriented between 120 degrees and 150 degrees and between at 190 degrees and 220 degrees relative to the incident beam. Sensitivity was evaluated for Mo/Mo, Mo/Rh, and Rh/Rh target-filter combinations. The individual dosimeter model sensitivity was 4.45 x 10(4) mV/C kg(-1) (11.47 mV R-1) for TN-502RDS (micro); 5.93 x 10(4) mV per C kg(-1) (15.31 mV R-1) for TN-1002RD; 6.06 x 10(4) mV/C kg(-1) (15.63 mV R-1) for TN-1002RDI; 9.49 x 10(4) mV per C kg(-1) (24.49 mV R-1) for TN-1002RDM (micro); and 11.20 x 104 mV/C kg(-1) (28.82 mV R-1) for TN-1002RDS (micro). The energy response is presented and is observed to vary with dosimeter model, generally increasing with tube potential through the mammography energy range. An intercomparison of the high-sensitivity mode of TN-RD-22 was made to the very-high sensitivity bias power supply using a Mo/Mo target-filter. The very-high sensitivity-bias power supply increased dosimeter response by 1.45 +/- 0.04 for dosimeter models TN-1002RD and TN-1002RDM. The responses of all dosimeter models were found to be linear for tube potentials of between 24 and 48 kVp. Dosimeters showed a reproducibility varying from 15.5% to 31.8% depending on the model of dosimeter. Micro MOSFETS model Nos. TN-1002RDS and TN-1002RDM used in conjunction with their respective high-sensitivity and ultrahigh- sensitivity bias supplies provided the highest sensitivity response of the models evaluated. Either micro MOSFETS model No. TN-1002RDS or TN-1002RDM used in conjunction with the appropriate bias supply provide the best choice for clinical mammography applications. Under these conditions, MOSFET dosimeters can provide a viable option as a dosimeter in the mammography energy range (22-50 kVp). The clinical application of MOSFET dosimeters must take into account the energy dependence and reproducibility to ensure accurate measurements. (c) 2006 American Association of Physicists in Medicine.
引用
收藏
页码:514 / 520
页数:7
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