Growth and characterization of Cu2ZnSnSe4 thin films by a two-stage process

被引：22

作者：

Bhaskar, P. Uday ^{[1
]}

Babu, G. Suresh ^{[1
]}

Kumar, Y. B. Kishore ^{[1
]}

Raja, V. Sundara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Solar Energy Lab, Tirupati 517502, Andhra Pradesh, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 115卷

关键词：

CZTSe; Selenization; Thin films; Structural properties; Optical band gap; Raman spectroscopy; SELENIZATION;

D O I：

10.1016/j.solmat.2013.03.017

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polycrystalline Cu2ZnSnSe4 (CZTSe) thin films were prepared by a two-stage process namely thermal evaporation of stacked layers Cu/ZnSe/Sn/Se on soda-lime glass substrates held at different substrate temperatures (T-s) in the range 523-723 K followed by annealing the stack in selenium atmosphere at 723 K for an hour. The effect of T-s on the growth and properties of these films were analyzed by studying their structural, microstructural and optical properties. XRD studies revealed the structure to be kesterite with a = 0.569 nm and c = 1.139 nm. Raman spectroscopy is used as a complimentary tool to know the presence of possible secondary phases. The crystallinity of the films improved with increase in the substrate temperature. Spectral transmittance studies of these films revealed two optical transitions with direct band gaps of similar to 1.0 eV and 1.4 eV which are attributed to CZTSe and CZTSe with minor ZnSe, as the annealed stack might be inhomogeneous. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：181 / 188

页数：8

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