Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

被引:31
作者
Faigon, Adrian [1 ,2 ]
Lipovetzky, Jose [3 ]
Redin, E. [3 ]
Krusczenski, Gonzalo [3 ]
机构
[1] Univ Buenos Aires, Fac Ingn, Dept Fis, Device Phys Lab Microelect, Buenos Aires, DF, Argentina
[2] Consejo Nacl Invest Cient & Tecn, CP, RA-1033 Buenos Aires, DF, Argentina
[3] Univ Buenos Aires, Fac Ingn, Dept Fis, Device Phys Lab Microelect, Buenos Aires, DF, Argentina
关键词
Dosimetry; gamma rays; MOS devices; radiation effects;
D O I
10.1109/TNS.2008.2000767
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work proposes a new measurement technique to extend the dose range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining a uniform sensitivity along the whole measurement. The technique was applied with 70 mn MOS dosimeters, extending the dose measurement range from less than a kilogray to more than 675 kGy without showing wear effects. An initial saturation of interface traps creation ensures repeatability in the responses.
引用
收藏
页码:2141 / 2147
页数:7
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