Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

被引：33

作者：

Faigon, Adrian ^{[1
,2
]}

Lipovetzky, Jose ^{[3
]}

Redin, E. ^{[3
]}

Krusczenski, Gonzalo ^{[3
]}

机构：

[1] Univ Buenos Aires, Fac Ingn, Dept Fis, Device Phys Lab Microelect, Buenos Aires, DF, Argentina

[2] Consejo Nacl Invest Cient & Tecn, CP, RA-1033 Buenos Aires, DF, Argentina

[3] Univ Buenos Aires, Fac Ingn, Dept Fis, Device Phys Lab Microelect, Buenos Aires, DF, Argentina

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 04期

关键词：

Dosimetry; gamma rays; MOS devices; radiation effects;

D O I：

10.1109/TNS.2008.2000767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work proposes a new measurement technique to extend the dose range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining a uniform sensitivity along the whole measurement. The technique was applied with 70 mn MOS dosimeters, extending the dose measurement range from less than a kilogray to more than 675 kGy without showing wear effects. An initial saturation of interface traps creation ensures repeatability in the responses.

引用

页码：2141 / 2147

页数：7

共 30 条

[1] CAD MODEL FOR THRESHOLD AND SUBTHRESHOLD CONDUCTION IN MOSFETS [J].