A new CMOS comparator robust to process and temperature variations for SAR ADC converters

被引:15
作者
de la Fuente-Cortes, Gisela [1 ]
Espinosa Flores-Verdad, Guillermo [1 ]
Gonzalez-Diaz, Victor R. [2 ]
Diaz-Mendez, A. [1 ]
机构
[1] Natl Inst Astrophys Opt & Elect, Calle Luis Enrique Erro 1 Tonantzintla, Puebla, Mexico
[2] Benemerita Univ Autonoma Puebla, Fac Ciencias Elect, Av San Claudio & 18 Sur, Puebla, Mexico
关键词
Analog comparator; ADC SAR; Process and temperature variations; Robust design;
D O I
10.1007/s10470-016-0916-9
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a novel comparator being robust to temperature and process variations. The new comparator is confronted to a conventional topology used in most of the Successive Approximations Analog to Digital Converters (SAR ADCs) for biomedical applications. To verify the benefits of the new comparator, it was designed on a CMOS 65 nm process and characterized with post layout simulations under conditions of process and temperature fluctuations. With the proposed circuit, a SAR ADC exhibits 83.11 dB of Signal to Noise Ratio at 1.28 MS/s and of power consumption. The PT variations for critical corners are less than 0.58 bits.
引用
收藏
页码:301 / 308
页数:8
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