A METHOD AND ELECTRICAL MODEL FOR THE ANODIC BONDING OF SOI AND GLASS WAFERS

被引:0
作者
Tatar, E. [1 ]
Torunbalci, M. M. [1 ]
Alper, S. E. [1 ]
Akin, T. [1 ]
机构
[1] Middle E Tech Univ, METU MEMS Res Ctr, TR-06531 Ankara, Turkey
来源
2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2012年
关键词
SILICON;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bonding mechanism with an electrical model, for the first time in the literature. SOI-glass anodic bonding can be achieved at voltages as low as 250V similar to Si-glass anodic bonding, and the underlying principles can be understood by modeling the overall system with a series-connected capacitor-resistor network. The SOI-oxide layer can be added as a capacitor to the classical anodic bonding model, and the behavior of the bonding can be estimated with the basic circuit theory. The oxide capacitance in the model acts as a short circuit at the time instant when the bonding potential is applied, and then it gradually becomes an open circuit. The model is also successfully adapted to triple stack glass-Si-glass anodic bonding, which enables wafer level packaging and offers many opportunities to MEMS designers.
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页数:4
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