The impact of thermal boundary resistance in phase-change memory devices

被引：106

作者：

Reifenberg, John P. ^{[1
]}

Kencke, David L. ^{[2
]}

Goodson, Kenneth E. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

design automation; nonvolatile memories; phase-change memory (PCM); thermal boundary resistance;

D O I：

10.1109/LED.2008.2003012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal conduction governs the writing time and energy of phase-change memory (PCM) devices. Recent measurements demonstrated large thermal resistances at the interfaces of phase-change materials with neighboring electrode and passivation materials. In this letter, electrothermal simulations quantify the impact of these resistances on the set to reset transition. The programming current decreases strongly with increasing boundary resistance due to increased lateral temperature uniformity, which cannot be captured using a reduced effective conductivity in the phase-change material. Reductions in programming current from 20% to 30% occur for an interface resistance of 50 m(2) . K/GW. The precise spatial distribution of thermal properties is critical for the simulation of PCM devices.

引用

页码：1112 / 1114

页数：3

共 30 条

[1]

[Anonymous], 2003, VLSI TECHNOLOGY

[2] Nanoscale thermal transport [J].

Cahill, DG ;

Ford, WK ;

Goodson, KE ;

Mahan, GD ;

Majumdar, A ;

Maris, HJ ;

Merlin, R ;

Phillpot, SR .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :793-818

[3]

Cho SL, 2005, 2005 Symposium on VLSI Technology, Digest of Technical Papers, P96

[4] Lattice dynamics of a disordered solid-solid interface [J].

Fagas, G ;

Kozorezov, AG ;

Lambert, CJ ;

Wigmore, JK ;

Peacock, A ;

Poelaert, A ;

den Hartog, R .

PHYSICAL REVIEW B, 1999, 60 (09) :6459-6464

[5]

Ha Y. H., 2003, VLSI S, P175

[6]

Happ T., 2006, S VLSI TECHN, DOI [10.1109/VLSIT.2006.1705246, DOI 10.1109/VLSIT.2006.1705246]

[7] Analysis of phase distribution in phase-change nonvolatile memories [J].

Ielmini, D ;

Lacaita, AL ;

Pirovano, A ;

Pellizzer, F ;

Bez, R .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :507-509

[8] Electronic properties of amorphous and crystalline Ge2Sb2Te5 films [J].

Kato, T ;

Tanaka, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10) :7340-7344

[9] The role of interfaces in Damascene phase-change memory [J].

Kencke, David L. ;

Karpov, Ilya V. ;

Johnson, Brian G. ;

Lee, Sean Jong ;

Kau, DerChang ;

Hudgens, Stephen J. ;

Reifenberg, John P. ;

Savransky, Semyon D. ;

Zhang, Jingyan ;

Giles, Martin D. ;

Spadini, Gianpaolo .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :323-+

[10] Fullerene thermal insulation for phase change memory [J].

Kim, Cheolkyu ;

Suh, Dong-Seok ;

Kim, Kijoon H. P. ;

Kang, Youn-Seon ;

Lee, Tae-Yon ;

Khang, Yoonho ;

Cahill, David G. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

← 1 2 3 →