High-power 2.8 W blue-violet laser diode for white light sources

被引：16

作者：

Hashimoto, Rei ^{[1
]}

Hung, Hung ^{[1
]}

Hwang, Jongil ^{[1
]}

Saito, Shinji ^{[1
]}

Nunoue, Shinya ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan

来源：

OPTICAL REVIEW | 2012年 / 19卷 / 06期

关键词：

blue-violet laser; InGaN; laser diode excitation white light source; facet coating; AlN/SiN/SiO2; reliability;

D O I：

10.1007/s10043-012-0068-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1A operating current.

引用

页码：412 / 414

页数：3

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