Stacking fault related luminescence in GaN nanorods

被引：25

作者：

Forsberg, M. ^{[1
]}

Serban, A. ^{[1
]}

Poenaru, I. ^{[2
]}

Hsiao, C-L ^{[1
]}

Junaid, M. ^{[3
]}

Birch, J. ^{[1
]}

Pozina, G. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[2] Fraunhofer ISC, Project Grp Mat Recycling & Resource Strategy IWK, D-63457 Hanau, Germany

[3] Rhein Westfal TH Aachen, D-52074 Aachen, Germany

来源：

NANOTECHNOLOGY | 2015年 / 26卷 / 35期

基金：

瑞典研究理事会;

关键词：

GaN nanorods; stacking faults; time-resolved photoluminescence; recombination time; multiple quantum wells; sputtering; MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; GALLIUM NITRIDE; QUANTUM-WELLS; GROWTH; NANOWIRES; PHOTOLUMINESCENCE; TEMPERATURE; DYNAMICS; EXCITONS;

D O I：

10.1088/0957-4484/26/35/355203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at similar to 3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of similar to 20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.

引用

页数：9

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