N2O-plasma effect on low-temperature deposited gate dielectric for organic thin-film transistors

被引：4

作者：

Fan, C. -L. ^{[1
,2
]}

Yang, T. -H. ^{[1
]}

Lin, C. -C. ^{[1
]}

Huang, C. -H. ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Grad Inst Electopt Engn, Taipei 106, Taiwan

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 19期

关键词：

D O I：

10.1049/el:20080735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of N2O-plasma treated pentacene thin-film transistors are investigated. The treatment can enhance the on current almost two times, increase the field-effect mobility (mu(FE)) greater than 50%, and reduce the interface traps to 31%, compared to devices without plasma treatment. This improvement is presumably owing to pentacene crystallisation enhancement and the decreased traps state density between the pentacene and gate dielectric interface. The N2O-plasma treated gate dielectric has been found effective in improving organic thin-film transistor (OTFT) performance.

引用

页码：1158 / 1159

页数：2

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