Polarity inversion of aluminum nitride by direct wafer bonding

被引：18

作者：

Hayashi, Yusuke ^{[1
]}

Katayama, Ryuji ^{[2
]}

Akiyama, Toru ^{[3
]}

Ito, Tomonori ^{[3
]}

Miyake, Hideto ^{[1
,3
]}

机构：

[1] Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan

[2] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[3] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 03期

基金：

欧盟地平线“2020”;

关键词：

ALN; GAN; TRANSISTORS; SAPPHIRE; LASER;

D O I：

10.7567/APEX.11.031003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel fabrication process based on direct bonding technologies is proposed and demonstrated to achieve polarity inversion in AlN. High-angle annular dark-field scanning transmission electron microscopy observation clearly showed an atomically flat bonding interface and an abrupt transition from Al polarity (+c) to N polarity (-c) through a single monolayer. This ideal polarity inversion of III-nitride materials is expected to provide new insight into heteropolar device applications. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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