Polarity inversion of aluminum nitride by direct wafer bonding

被引：16
作者：
Hayashi, Yusuke [1 ]
Katayama, Ryuji [2 ]
Akiyama, Toru [3 ]
Ito, Tomonori [3 ]
Miyake, Hideto [1 ,3 ]
机构：
[1] Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan
[2] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[3] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan
来源：
APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 03期
基金：
欧盟地平线“2020”;
关键词：
ALN; GAN; TRANSISTORS; SAPPHIRE; LASER;
D O I：
10.7567/APEX.11.031003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel fabrication process based on direct bonding technologies is proposed and demonstrated to achieve polarity inversion in AlN. High-angle annular dark-field scanning transmission electron microscopy observation clearly showed an atomically flat bonding interface and an abrupt transition from Al polarity (+c) to N polarity (-c) through a single monolayer. This ideal polarity inversion of III-nitride materials is expected to provide new insight into heteropolar device applications. (C) 2018 The Japan Society of Applied Physics
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页数：4
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