Electrochemical deposition of ZnO buffer layer for CIGS solar cell

被引：2
|
作者：
Chang, Zue-Chin [1 ]
Lin, Chien Cheng [1 ]
机构：
[1] Natl Chin Yi Univ Technol, Dept Mech Engn, Taichung 411, Taiwan
来源：
2016 INTERNATIONAL SYMPOSIUM ON COMPUTER, CONSUMER AND CONTROL (IS3C) | 2016年
关键词：
CIGS thin film solar cell; ZnO; ZnCl2; Electrochemical deposition; ELECTROPHORETIC DEPOSITION;
D O I：
10.1109/IS3C.2016.257
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
In this study, ZnO thin films were deposited on ITO (Indium tin oxide) conductive glass by electrochemical deposition. The experiment's electrochemical deposition used zinc chloride (ZnCl2) electrolyte with current density of 0.01-0.15 amp, working voltage of 0.95-3 V, and deposition time of 30-120 s. The test chip was oxidized by thermal annealing treatment. The properties of ZnO films were analyzed by Field Emission Scanning Electron Microscopy (FESEM), X-ray diffraction (XRD), Ultraviolet-Visible Spectrophotometry (UV-VIS), and Hall Effect Analysis. The ZnO film with 0.03 amp, 1.55 V, and 120 s of deposition time had the best quality. Its transmittance was up to 91%, and its resistance was 1.79x10(4)Omega/cm(2).
引用
收藏
页码：1018 / 1021
页数：4
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