An Ultralow Power Subthreshold CMOS Voltage Reference Without Requiring Resistors or BJTs

被引:39
作者
Liu, Yang [1 ]
Zhan, Chenchang [1 ]
Wang, Lidan [2 ,3 ]
机构
[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenyang 518055, Liaoning, Peoples R China
[2] SUSTech, Dept Elect & Elect Engn, Shenzhen, Peoples R China
[3] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300071, Peoples R China
基金
中国国家自然科学基金;
关键词
Low-temperature coefficient; ultralow power; voltage reference;
D O I
10.1109/TVLSI.2017.2754442
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This brief presents a novel ultralow power CMOS voltage reference (CVR) with only 4.6-nW power consumption. In the proposed CVR circuit, the proportional-to-absolute-temperature voltage is generated by feeding the leakage current of a zero-V-gs nMOS transistor to two diode-connected nMOS transistors in series, both of which are in subthreshold region; while the complementary-to-absolute-temperature voltage is created by using the body diodes of another nMOS transistor. Consequently, low-power operation can be achieved without requiring resistors or bipolar junction transistors, leading to small chip area consumption. The proposed CVR circuit is fabricated in a standard 0.18-mu m CMOS process. Measurement results show that the prototype design is capable of providing a 755 mV typical reference voltage with 34 ppm/degrees C from -15 degrees C to 140 degrees C. Moreover, the typical power consumption is only 4.6 nW at room temperature and the active area is only 0.0598 mm(2).
引用
收藏
页码:201 / 205
页数:5
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