Performance optimisation of epitaxially regrown 1.3-μm vertical-cavity surface-emitting lasers

被引：10
|
作者：
von Wuertemberg, R. Marcks [1 ]
Yu, X. [1 ]
Berggren, J. [1 ]
Hammar, M. [1 ]
机构：
[1] Royal Inst Technol KTH, Dept Microelect & Appl Phys, SE-16440 Kista, Sweden
来源：
IET OPTOELECTRONICS | 2009年 / 3卷 / 02期
关键词：
VCSELS; OXIDATION; POWER; INP;
D O I：
10.1049/iet-opt.2008.0037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A number of GaAs-based long-wavelength, vertical-cavity, surface-emitting laser structures with optical and electrical confinement based on selective area epitaxy have been fabricated and evaluated. The influence on output power, threshold current, thermal stability and modal properties from design parameters such as bottom-distributed Bragg reflector (DBR) doping, cavity doping, dielectric top DBR design and carrier confinement barriers is evaluated. More than 7 mW of output power is emitted from multimode devices with a square active region size of 10 mm. Single-mode power from smaller devices is restricted to 1.5 mW because of a non-optimal cavity shape.
引用
收藏
页码：112 / 121
页数：10
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