Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

被引：196

作者：

Jia, Jingyuan ^{[1
,2
]}

Jang, Sung Kyu ^{[1
,2
]}

Lai, Shen ^{[1
,2
]}

Xu, Jiao ^{[1
,2
]}

Choi, Young Jin ^{[4
]}

Park, Jin-Hong ^{[3
]}

Lee, Sungjoo ^{[1
,2
,3
]}

机构：

[1] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[2] Sungkyunkwan Univ SKKU, Ctr Human Interface Nanotechnol HINT, Samsung SKKU Graphene Ctr, Suwon 440746, South Korea

[3] Sungkyunkwan Univ SKKU, Coll Informat & Commun Engn, Suwon 440746, South Korea

[4] Sejong Univ, Dept NanoTechnol & Adv Mat Engn, Seoul 143747, South Korea

来源：

ACS NANO | 2015年 / 9卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

black phosphorus; 2-D material; plasma etching; 2-D thickness control; environmental stability; X-RAY PHOTOELECTRON; GRAPHENE; OPTOELECTRONICS; PASSIVATION; TRANSISTORS; MOBILITY; RAMAN;

D O I：

10.1021/acsnano.5b04265

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the preparation of thickness-controlled few-layer black phosphorus (BP) films through the modulated plasma treatment of BP flakes. Not only does the plasma treatment control the thickness of the BP film, it also removes the chemical degradation of the exposed oxidized BP surface, which results in enhanced field-effect transistor (FET) performance. Our fabricated BP FETs were passivated with poly(methyl methacrylate) (PMMA) immediately after the plasma etching process. With these techniques, a high field-effect mobility was achieved, 1150 cm(2)/(V s), with an I-on/I-off ratio of similar to 10(5) at room temperature. Furthermore, a fabricated FET with plasma-treated few-layer BP that was passivated with PMMA was found to retain its I-V characteristics and thus to exhibit excellent environmental stability over several weeks.

引用

页码：8729 / 8736

页数：8

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