A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping

被引：11

作者：

Mahapatra, S ^{[1
]}

Rao, VR

Parikh, CD

Vasi, J

Cheng, B

Woo, JCS

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[2] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00369-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 mu m have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel V-T profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 mu m channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel.

引用

页码：193 / 196

页数：4