Zn Diffusion in Ruthenium Doped InP with Annealing by Metalorganic Vapor Phase Epitaxy

被引：0

作者：

Yamaguchi, H. ^{[1
]}

Nagira, T. ^{[1
]}

Kawazu, Z. ^{[1
]}

Ono, K. ^{[1
]}

Takemi, M. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Itami, Hyogo 6648641, Japan

来源：

2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

Zn; Ruthenium; diffusion; InP; MOVPE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/p-InP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.

引用

页数：2

共 4 条

[1] Ruthenium:: A superior compensator of InP [J].

Dadgar, A ;

Stenzel, O ;

Näser, A ;

Iqbal, MZ ;

Bimberg, D ;

Schumann, H .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3878-3880

[2] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

LONGINI, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130

[3]

Sakiano G., 2012, OPT FIB COMM C EXP

[4] Electric characteristics of ruthenium doped InP and its application for buried-heterostructure lasers [J].

Yamaguchi, Harunaka ;

Nagira, Takashi ;

Sakaino, Go ;

Ono, Kenichi ;

Takemi, Masayoshi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02) :342-345

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