Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering

被引：28
作者：
Saji, Kachirayil J. [1 ]
Mary, A. P. Reena [1 ]
机构：
[1] Univ Calicut, Govt Victoria Coll, Dept Phys, Palakkad 678001, India
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 09期
关键词：
ELECTRONIC-STRUCTURES; MOBILITY; TRANSPORT; MONOXIDE;
D O I：
10.1149/2.0091509jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin oxide has been demonstrated as an ideal material for fabricating p-type and n-type thin film transistors (TFTs) for transparent CMOS type device fabrication. Both p-type and n-type conduction was observed in the thin films, prepared from metallic tin target by simply varying the oxygen flow rate during RF magnetron sputter deposition. Films deposited at room temperature were amorphous in nature, which after annealing at 200 degrees C in air, crystallized to SnO and/or SnO2 phases. The TFTs fabricated on thermally oxidized silicon substrates showed high field effect mobility of 4.13 and 16 cm(2)/Vs with drain current on-off ratio 6x10(2) and 10(7) respectively for SnO p-type and SnO2 n-type TFTs. These are the highest values for p-type and n-type oxide TFTs fabricated from same source material. (C) The Author(s) 2015. Published by ECS. All rights reserved.
引用
收藏
页码：Q101 / Q104
页数：4
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