Optical and electrical H2- and NO2-sensing properties of Au/InxOvNz films

被引：11
作者：
Ando, M [1 ]
Steffes, H
Chabicovsky, R
Haruta, M
Stangl, G
机构：
[1] Japanese Natl Inst Adv Ind Sci & Technol, AIST, Photon Res Inst, Ikeda, Osaka, Japan
[2] Tech Univ Berlin, MAT Ctr, Berlin, Germany
[3] Vienna Univ Technol, Inst Ind Elect & Mat Sci, A-1040 Vienna, Austria
[4] Japanese Natl Inst Adv Ind Sci & Technol, AIST, Res Inst Green Technol, Tsukuba, Ibaraki, Japan
来源：
IEEE SENSORS JOURNAL | 2004年 / 4卷 / 02期
关键词：
Au/InxOyNz films; electrical NO2 sensor; optical H-2 sensor;
D O I：
10.1109/JSEN.2004.823656
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we describe the optical and electrical gas-sensing properties of InxOyNz films with an ultrathin gold promoter overlayer. We have fabricated InxOyNz films with a nanocrystalline porous structure by RF-sputtering in Ar/N-2 followed by an annealing process. Gold particles with 20-30-nm diameter have been formed on top of the InxOyNz films by dc sputtering and an annealing process. We have investigated the optical H-2- and NO2-sensing properties (change of absorbance) and also the electrical sensing effect (change of electrical resistance) for these two gases. A combined optical/electrical sensor for H-2/NO2 is proposed.
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页码：232 / 236
页数：5
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