Depth resolved studies of SrTiO3 defects using x-ray excited optical luminescence and cathodoluminescence

被引：9

作者：

Rosenberg, R. A. ^{[1
]}

Choi, Y. ^{[1
]}

Vijayalakshmi, K. ^{[1
]}

Kareev, M. ^{[2
]}

Tchakhalian, J. ^{[2
]}

Balaz, Snjezana ^{[3
,4
]}

Brillson, L. J. ^{[3
,4
]}

机构：

[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[4] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

基金：

美国国家科学基金会;

关键词：

CRYOGENIC TEMPERATURES; DIELECTRIC-PROPERTIES; GALLIUM-ARSENIDE; PHOTOLUMINESCENCE; GAN; EXCITATION; FILMS; SPECTROSCOPY; DEPENDENCE; INTERFACES;

D O I：

10.1063/1.4807117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed comparative depth-dependent x-ray excited optical luminescence (XEOL) and depth resolved cathodoluminescence spectroscopy measurements in order to understand the native point defect distribution in three SrTiO3 samples. Both techniques found surface segregation of Ti3+ defects, but apparent differences in the oxygen vacancy distribution. Due to the lower excitation flux densities employed in XEOL, there is a delayed onset ("dead layer") revealed in the oxygen defect depth distribution, which results from band bending near the surface. By modeling the data, we are able to estimate the Ti3+ depth distribution and the depletion layer width. (C) 2013 AIP Publishing LLC.

引用

页数：5

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